Norwegian researchers are the world’s first to develop a method for producing semiconductors from graphene. This finding may revolutionise the technology industry.
The method involves growing semiconductor-nanowires on graphene. To achieve this, researchers “bomb” the graphene surface with gallium atoms and arsenic molecules, thereby creating a network of minute nanowires.
The result is a one-micrometre thick hybrid material which acts as a semiconductor. By comparison, the silicon semiconductors in use today are several hundred times thicker. The semiconductors’ ability to conduct electricity may be affected by temperature, light or the addition of other atoms.